|
The BS170 is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
Features:
- Manufacturer: ONSEMI
- High density cell design for low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 150°C/W thermal resistance, junction to ambient
Specifications:
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 500mA
- Drain Source Voltage Vds: 60V
- Drain Source On State Resistance: 1.2ohm
- On Resistance Rds(on): 1.2ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 2.1V
- Power Dissipation Pd: 830mW
- Operating Temperature Max: 150°C
|